Strain and Damage in Silicon Due to a Deep Oxygen Implantation
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چکیده
منابع مشابه
Strain and Damage in Silicon Due to a Deep Oxygen Implantation
Silicon wafers, implanted with oxygen at 550°C to form a buried oxide layer have been examined with TEM and x-ray diffraction. Implantation damage increased with depth up to 1500 ~ where some amorphous regions were seen. The amorphous region extended for -4500 A to a damaged crystalline region 1000 ~ thick. Double crystal x-ray rocking curves of the as-implanted and of annealed crystals were ob...
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ژورنال
عنوان ژورنال: MRS Proceedings
سال: 1985
ISSN: 0272-9172,1946-4274
DOI: 10.1557/proc-53-263